WebRD09MUP2 Datasheet, PDF : Search Partnumber : Match&Start with "RD09MUP2"-Total : 5 ( 1/1 Page) Manufacturer: Part No. Datasheet: Description: Mitsubishi Electric Sem... RD09MUP2: 152Kb / 7P: Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2: 343Kb / 9P: RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W WebPRODUCT LIST 3.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Ta=25°C †: Gate Protection Diode RD02LUS2 RD04LUS2 Si, MOS† Si, MOS† 25 25 15.6 46.3 3.6 3.6 Type Number Structure Max.ratings VDSS [V] Pch [W] Vdd [V] UHF
RD09MUP2 MITSUBISHI Transistors - Jotrin Electronics
WebRD09MUP2-501, T512 is EU RoHS compliant. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS … WebRD07MVS1B-T212 Request Quote Please complete all required fields with your contact information.Click "SUBMIT REQUEST" we will contact you shortly by email. Or Email us: [email protected]. Part No. Quantity Target Price (USD) Download Details PDF Inquiry Online Contact Name Company E-mail Phone Message Specifications Packaging Shipping … density of pinacolone
RD01MUS1 Datasheet(PDF) - Mitsubishi Electric Semiconductor
Web17 RD09MUP2 100,T102 G477318 Die pattern change RD09MUP2 *** G477318 Done End of May 2024 PMM 18 RD12MVS1 201,T212,T214 G477377 Die pattern change RD12MVS1 501,T512,T514 G477377 Done Done(Tentative Ver.) End of Jun 2024(Final Ver.) End of Aug. 2024 SLP 19 RD12MVP1 100,T102 G477318Die pattern change RD12MVP1 *** Done … WebRD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. FEATURES •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz •High Efficiency: 50%min. (520MHz) •Integrated gate … ffxi best furnishings